HM2N20 mosfet equivalent, n-channel enhancement mode power mosfet.
* VDS = 200V,ID =2A RDS(ON) < 580mΩ @ VGS=10V (Typ:520mΩ)
* High density cell design for ultra low Rdson
* Fully characterized avalanche voltage and current <.
General Features
* VDS = 200V,ID =2A RDS(ON) < 580mΩ @ VGS=10V (Typ:520mΩ)
* High density cell design for ultra.
The +01 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications.
General Features
* VDS = 200V,ID =2A RDS(ON) < 580mΩ @ VGS=10V (Typ:520mΩ)
* High densi.
Image gallery
Download